field-effect transistors fets Search Results


high-performance field-effect transistors (fets) based on p4tdpp  (Verlag GmbH)
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High Performance Field Effect Transistors (Fets) Based On P4tdpp, supplied by Verlag GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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bottom-contacted field-effect transistors bot-fets  (AIXTRON Inc)
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AIXTRON Inc bottom-contacted field-effect transistors bot-fets
Bottom Contacted Field Effect Transistors Bot Fets, supplied by AIXTRON Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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field effect transistors (fets) with nanotubes  (Nanomix Inc)
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Nanomix Inc field effect transistors (fets) with nanotubes
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nanowires (nws)-based field-effect transistors (fets)  (Innovative Biosensors)
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Innovative Biosensors nanowires (nws)-based field-effect transistors (fets)
Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
Nanowires (Nws) Based Field Effect Transistors (Fets), supplied by Innovative Biosensors, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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three-terminal field-effect transistors (fets)  (BioMimetic Therapeutics)
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BioMimetic Therapeutics three-terminal field-effect transistors (fets)
Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
Three Terminal Field Effect Transistors (Fets), supplied by BioMimetic Therapeutics, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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plasmonic terahertz oscillations in various types of field effect transistors (fets)  (Verlag GmbH)
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Verlag GmbH plasmonic terahertz oscillations in various types of field effect transistors (fets)
Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
Plasmonic Terahertz Oscillations In Various Types Of Field Effect Transistors (Fets), supplied by Verlag GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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spatial wavefunction-switched (sws) field-effect transistors (fets)  (Rsoft Inc)
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Rsoft Inc spatial wavefunction-switched (sws) field-effect transistors (fets)
Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
Spatial Wavefunction Switched (Sws) Field Effect Transistors (Fets), supplied by Rsoft Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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field-effect transistors (fets)  (Polyera Corporation)
90
Polyera Corporation field-effect transistors (fets)
Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
Field Effect Transistors (Fets), supplied by Polyera Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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d-mos field-effect transistors (fets)  (Signetics Corporation)
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Signetics Corporation d-mos field-effect transistors (fets)
Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
D Mos Field Effect Transistors (Fets), supplied by Signetics Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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cnt field-effect transistors fets  (PlasticsOne inc)
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PlasticsOne inc cnt field-effect transistors fets
Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
Cnt Field Effect Transistors Fets, supplied by PlasticsOne inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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electrolyte-oxidesilicon field-effect transistors (eos-fets)  (Verlag GmbH)
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Verlag GmbH electrolyte-oxidesilicon field-effect transistors (eos-fets)
Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
Electrolyte Oxidesilicon Field Effect Transistors (Eos Fets), supplied by Verlag GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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microwave field effect transistors fets  (Macquarie Bank)
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Macquarie Bank microwave field effect transistors fets
Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
Microwave Field Effect Transistors Fets, supplied by Macquarie Bank, used in various techniques. Bioz Stars score: 86/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Image Search Results


Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a nanowire device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .

Journal: Biosensors & Bioelectronics

Article Title: Recent advances in nanowires-based field-effect transistors for biological sensor applications

doi: 10.1016/j.bios.2017.09.024

Figure Lengend Snippet: Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a nanowire device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .

Article Snippet: Nanowires (NWs)-based field-effect transistors (FETs) have attracted considerable interest to develop innovative biosensors using NWs of different materials (i.e. semiconductors, polymers, etc.).

Techniques: Control